Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12323/4541| Title: | A New Low-Noise Avalanche Photodiode With Micro-Pixel Structure |
| Authors: | Alekperov, O. Jafarov, E. Sadygov, Z. Safarov, N. Suleimanov, M. Madatov, R. Musaev, M. |
| Issue Date: | 2004 |
| Publisher: | Fizika |
| Series/Report no.: | Cild X;№ 4 |
| Abstract: | A new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise factor ~ 4 at a high multiplication factor (M~10000). A high space uniformity of sensitivity was found for gain of M~ 1000. |
| URI: | http://hdl.handle.net/20.500.12323/4541 |
| Appears in Collections: | Publication |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| A NEW LOW-NOISE AVALANCHE PHOTODIODE WITH MICRO-PIXEL STRUCTURE.pdf | 166.27 kB | Adobe PDF | View/Open |
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