Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12323/4541
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dc.contributor.authorAlekperov, O.-
dc.contributor.authorJafarov, E.-
dc.contributor.authorSadygov, Z.-
dc.contributor.authorSafarov, N.-
dc.contributor.authorSuleimanov, M.-
dc.contributor.authorMadatov, R.-
dc.contributor.authorMusaev, M.-
dc.date.accessioned2020-07-09T16:41:07Z-
dc.date.available2020-07-09T16:41:07Z-
dc.date.issued2004-
dc.identifier.urihttp://hdl.handle.net/20.500.12323/4541-
dc.description.abstractA new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise factor ~ 4 at a high multiplication factor (M~10000). A high space uniformity of sensitivity was found for gain of M~ 1000.en_US
dc.language.isoenen_US
dc.publisherFizikaen_US
dc.relation.ispartofseriesCild X;№ 4-
dc.titleA New Low-Noise Avalanche Photodiode With Micro-Pixel Structureen_US
dc.typeArticleen_US
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