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http://hdl.handle.net/20.500.12323/4541Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Alekperov, O. | - |
| dc.contributor.author | Jafarov, E. | - |
| dc.contributor.author | Sadygov, Z. | - |
| dc.contributor.author | Safarov, N. | - |
| dc.contributor.author | Suleimanov, M. | - |
| dc.contributor.author | Madatov, R. | - |
| dc.contributor.author | Musaev, M. | - |
| dc.date.accessioned | 2020-07-09T16:41:07Z | - |
| dc.date.available | 2020-07-09T16:41:07Z | - |
| dc.date.issued | 2004 | - |
| dc.identifier.uri | http://hdl.handle.net/20.500.12323/4541 | - |
| dc.description.abstract | A new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise factor ~ 4 at a high multiplication factor (M~10000). A high space uniformity of sensitivity was found for gain of M~ 1000. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Fizika | en_US |
| dc.relation.ispartofseries | Cild X;№ 4 | - |
| dc.title | A New Low-Noise Avalanche Photodiode With Micro-Pixel Structure | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Publication | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| A NEW LOW-NOISE AVALANCHE PHOTODIODE WITH MICRO-PIXEL STRUCTURE.pdf | 166.27 kB | Adobe PDF | View/Open |
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