Please use this identifier to cite or link to this item:
http://hdl.handle.net/20.500.12323/4530| Title: | On features of potential distribution in avalanche photodiodes with deeply buried pixels |
| Authors: | Sadygov, Z.Y. Jafarova, E.A. Dovlatov, A.A. Safarov, N.A. Ahmadov, F.I. Sadygov, A.Z. Abdullayev, X.I. Madatov, R.C. Muxtarov, R.M. |
| Issue Date: | 2013 |
| Publisher: | Azerbaijan Journal of Physics |
| Series/Report no.: | Vol. 19;№ 2 |
| Abstract: | The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried pixels is investigated. It was found that the electrons created in the photosensitive part of the device are collected to the corresponding n-pixel and multiplied in the avalanche region. At the same time the holes generated in the semiconductor substrate passes through the gaps between the n-pixels and therefore they are not amplified. This results in improvement the both signal/noise ratio and radiation resistance of the device |
| URI: | https://inis.iaea.org/search/search.aspx?orig_q=RN:45046629 http://hdl.handle.net/20.500.12323/4530 |
| Appears in Collections: | Publication |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| On features of potential distribution in avalanche photodiodes with deeply buried pixels.pdf | 141.35 kB | Adobe PDF | View/Open |
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