Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12323/4530
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dc.contributor.authorSadygov, Z.Y.-
dc.contributor.authorJafarova, E.A.-
dc.contributor.authorDovlatov, A.A.-
dc.contributor.authorSafarov, N.A.-
dc.contributor.authorAhmadov, F.I.-
dc.contributor.authorSadygov, A.Z.-
dc.contributor.authorAbdullayev, X.I.-
dc.contributor.authorMadatov, R.C.-
dc.contributor.authorMuxtarov, R.M.-
dc.date.accessioned2020-07-09T15:05:09Z-
dc.date.available2020-07-09T15:05:09Z-
dc.date.issued2013-
dc.identifier.urihttps://inis.iaea.org/search/search.aspx?orig_q=RN:45046629-
dc.identifier.urihttp://hdl.handle.net/20.500.12323/4530-
dc.description.abstractThe shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried pixels is investigated. It was found that the electrons created in the photosensitive part of the device are collected to the corresponding n-pixel and multiplied in the avalanche region. At the same time the holes generated in the semiconductor substrate passes through the gaps between the n-pixels and therefore they are not amplified. This results in improvement the both signal/noise ratio and radiation resistance of the deviceen_US
dc.language.isoenen_US
dc.publisherAzerbaijan Journal of Physicsen_US
dc.relation.ispartofseriesVol. 19;№ 2-
dc.titleOn features of potential distribution in avalanche photodiodes with deeply buried pixelsen_US
dc.typeArticleen_US
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