On features of potential distribution in avalanche photodiodes with deeply buried pixels

Please use this identifier to cite or link to this item: http://hdl.handle.net/20.500.12323/4530

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DC Field	Value	Language
dc.contributor.author	Sadygov, Z.Y.	-
dc.contributor.author	Jafarova, E.A.	-
dc.contributor.author	Dovlatov, A.A.	-
dc.contributor.author	Safarov, N.A.	-
dc.contributor.author	Ahmadov, F.I.	-
dc.contributor.author	Sadygov, A.Z.	-
dc.contributor.author	Abdullayev, X.I.	-
dc.contributor.author	Madatov, R.C.	-
dc.contributor.author	Muxtarov, R.M.	-
dc.date.accessioned	2020-07-09T15:05:09Z	-
dc.date.available	2020-07-09T15:05:09Z	-
dc.date.issued	2013	-
dc.identifier.uri	https://inis.iaea.org/search/search.aspx?orig_q=RN:45046629	-
dc.identifier.uri	http://hdl.handle.net/20.500.12323/4530	-
dc.description.abstract	The shape of potential distribution in micro-pixel avalanche photodiodes (MAPD) with deeply buried pixels is investigated. It was found that the electrons created in the photosensitive part of the device are collected to the corresponding n-pixel and multiplied in the avalanche region. At the same time the holes generated in the semiconductor substrate passes through the gaps between the n-pixels and therefore they are not amplified. This results in improvement the both signal/noise ratio and radiation resistance of the device	en_US
dc.language.iso	en	en_US
dc.publisher	Azerbaijan Journal of Physics	en_US
dc.relation.ispartofseries	Vol. 19;№ 2	-
dc.title	On features of potential distribution in avalanche photodiodes with deeply buried pixels	en_US
dc.type	Article	en_US
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