Kinetics of Crystallization of an Amorphous Film of Bi2Te3 (Se3)

Abstract

Phase formation processes in Bi-Te system have been investigated by kinematic electron diffraction method. It is established that Bi2Те3 and BiТе phases were formed on condensation plane in amorphous and crystallin state, respectively, at simultaneous and at consecutive evaporation bismuth and tellurium, irrespective of the order of evaporation of components. Amorphous Bi2Те3 phase is stable at room temperature and crystallize at 423K temperature. It is shown that ordering of BiТе phase is not result in ordering of atom structure and is dependent real structure. Kinetic parameters of crystallization of nanothick amorphous Bi2Те3(Se3) films are determined. On experimental results it is defined that crystallization kinetics of Bi2Se3 occur in accordance with Avram-Kolmogorov law and is described by the analytic expression of Vt=Vo[1–exp(–ktm)].