Absorption Coefficient of Bi2Tе2.5Se0.5 Structures Applicable to the Creation of Photoelectric Converters

Abstract

The dependences of the light absorption coefficient in the film structures Bi2Те2.5Se0.5 on the photon energy have been experimentally studied. It is shown that the profiles of the distribution of selenium atoms over the thickness of the surface layer of unannealed and depleted thin Bi2Те2.5Se0.5 films. It is also shown that the release of selenium during heat treatment is due to the relatively high vapor pressure of selenium in a three-component semiconductor compound. As a result of work are received Si - Bi2Те3-хSeх heterojunctions in thin-film execution, described by high values of differential resistance. Results of researches show, that the structures Bi2Те2.5Se0.5 received by a method of discrete thermal evaporation in a uniform work cycle, are suitable for use in low-voltage devices.