The Influences Of The Surface Effects On The Mechanisms Of The Current Passage In The Sillicon Photoelements With Optical Coverings

Abstract

The influence of two-layer superface coverings of ZnS+Nd2O3 on the volt-ampere characteristic (VAC) of sillicon photoelements is investigated. It is established that in a result of the penetration of zinc atoms in the near-surface region of the silicon the compensation degree of recombination centres increases. It leads to the bending of the band edges on the semiconductor surface. It, in turn, promotes the creation of the fitted electric field of the directed p-n transition. It is supposed that the increase of photocurrent is caused by the decrease of the velocity of the surface recombination in the result of the passivation of the surface levels.