New Technologies of Matrix Composite Polymer Photovoltaic and Photoresistive Materials

Abstract

The goal of the paper is development of more effective technology formation photovoltaic and photoresistive elements based on the polar and nonpolar polymers dispersed by CdS, ZnS, CdSe and CdTl particles. It was established that: 1. The interphase interaction in photoelectric composites on the interphase boundary is considerably depended on particle size of inorganic phase; 2. Polymer matrix is not passive phase in photoelectric composites, but defines a value of Rdark resistance/Rlight resistance parameter and value of photo-emf; 3. 3. Plasma crystallization of photoelectric composites is accompanied by formation of local levels with high concentration and activation energy in quasi-forbidden band of polymer matrix; 4. Doping of ferroelectric component with domain structure into photoelectric composite of polymer-CdS leads to increasing concentration of centers of local electric fields promoted division of photoinduced charges.